The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its low noise figure makes this device appropriate for use in the first and second stages of low noise amplifiers operating in the 0.5-12ÊGHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
| Symbol |
Parameter |
Units |
Absolute
Maximum[1] |
| VDS |
Drain Source Voltage |
V |
+5 |
| VGS |
Gate Source Voltage |
V |
-4 |
| VGD |
Gate-Drain Voltage |
V |
-7 |
| ID |
Drain Current |
mA |
IDSS |
| PT |
Power Dissipation [2,3] |
mW |
430 |
| TCH |
Channel Temperature |
°C |
175 |
| TSTG |
Storage Temperature[4] |
°C |
175 |
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 2.9 mW/°C for TCASE > 25°C.
4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit.After a device has been soldered into a circuit, it may be safely stored up to 175°C.
5. The small spot size of this technique results in a higher, though more accurate determination of jct han do alternate methods. See MEASUREMENTS section for more information.
Required Field 
